Micron Technology DRAM SDRAM-DDR4, Part #: MT40A1G8SA-062E AAT:E TR | Dynamic random access memory | DEX 15"-16" Both devices offer a low-current

Both devices offer a low-current drain of 1mA

SKU : CPQ:323617-001

Part #: IMBG65R048M1HXTMA1

On-Card Regulation • Battery Operated Equipment

Micron Technology DRAM SDRAM-DDR4, Part #: MT40A1G8SA-062E AAT:E TR | Dynamic random access memory | DEX 15"-16" Both devices offer a low-currentMicron Technology DRAM SDRAM DDR4, Part #: MT40A1G8SA 062E AAT: E TR features: VDD = VDDQ = 1. 2V + 60mv VPP = 2. 5V, 125mV, + 250mV On die, internal, adjustable VREFDQ generation 1. 2V pseudo open drain I O Refresh time of 8192 cycle at TC temperature range: 16 internal banks (x4, x8): 4 groups of 4 banks each 8n bit prefetch architecture Programmable data strobe preambles Data strobe preamble training Command Address latency (CAL) Multipurpose